An abrupt silicon p-n junction at T 300 K has doping concentrations of ND-1015 cm3 and Na = 5x1016 cm-3. Calculate (a) the built-in voltage VS, (b) the depletion width W at reverse biases of (i) Vr = 0 and (ii) PR-5 V, Vy = 0 and (ii) 5 V. (c) and the maximum electric field lEmax) at (i) VR= 0 and (ii) VR= 5V