A circuit designer intending to operate a n-MOSFET in saturation is considering the effect of changing the device dimensions and operating voltages on the drain current ID.
(a) Specifically, by what factor will ID change in each of the following situation?
I. The channel length is doubled
II. The channel width is doubled
III. The overdrive voltage is doubled
IV. The drain-to-source voltage is doubled
V. Changes (I), (II), (III), and (IV) are made simultaneously.
(b) From above 5 cases, which of these cases might cause the n-MOSFET to leave the saturation region? And how?