Respuesta :
Answer:
The non-stoichiometric cuprous oxide (Cu₂O) being a p-type semiconductor can be attributed to the presence of copper vacancies within its crystal lattice.
In the crystal structure of Cu₂O, there are copper atoms (Cu) and oxygen atoms (O) arranged in a specific pattern. However, due to various factors such as synthesis conditions or intrinsic defects, some of the copper atoms may be missing from their lattice sites, leaving behind vacancies. These vacancies create holes in the crystal lattice, which can accept electrons, thereby resulting in a net positive charge.
As a result of these copper vacancies, the material becomes positively charged overall, which leads to an excess of "holes" or positive charge carriers in the crystal lattice. These positively charged "holes" behave as charge carriers in the semiconductor, contributing to its p-type conductivity.
So, the presence of copper vacancies in the crystal lattice of non-stoichiometric Cu₂O leads to an excess of positive charge carriers, making it exhibit p-type semiconductor behavior.
Explanation:
Non-stoichiometric cuprous oxide, denoted as Cu₂O, exhibits p-type semiconductor behavior due to the presence of copper vacancies within its crystal lattice.
In the crystal structure of Cu₂O, copper atoms (Cu) and oxygen atoms (O) are arranged in a specific pattern. However, in non-stoichiometric compounds, there may be deviations from the ideal ratio of elements due to factors such as synthesis conditions or intrinsic defects. These deviations can lead to vacancies in the crystal lattice, particularly in the positions where copper atoms are supposed to reside.
When copper vacancies occur, they create what are known as "holes" within the crystal lattice. These holes represent locations where an electron is missing, resulting in a net positive charge in the vicinity of the vacancy. These positively charged holes are mobile and can act as charge carriers in the semiconductor material.
In p-type semiconductors, the majority charge carriers are positively charged "holes." Therefore, the presence of copper vacancies in non-stoichiometric Cu₂O results in an excess of positive charge carriers, leading to its classification as a p-type semiconductor.
Overall, the deviation from the ideal copper-to-oxygen ratio in non-stoichiometric Cu₂O creates vacancies that generate positively charged holes, enabling the material to exhibit p-type semiconductor behavior.
